CdTe (Cadmium Telluride) is an important II-VI group semiconductor material, featuring a direct bandgap, high absorption coefficient, and excellent photoelectric properties. This material is widely used in infrared optics and photovoltaics, and is suitable for manufacturing high-efficiency solar cells, infrared detectors, and X-ray detectors.
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Property
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Value
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Remarks
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Chemical Formula
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CdTe
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Crystal Structure
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Cubic system
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Lattice Parameter
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a = 6.48 Å
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Refractive Index
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n ≈ 2.7 (@10.6 μm)
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Customizable measurement wavelength
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Mohs Hardness
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2.5 Mohs
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Thermal Conductivity
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≈ 6.3 W/m·K
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Room temperature
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Melting Point
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1092 °C
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Density
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5.85 g/cm³
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Thermal Expansion Coefficient
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≈ 5.9 × 10⁻⁶/°C
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Room temperature
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Absorption Bandwidth
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Bandgap 1.44 eV (λ ≈ 860 nm)
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Absorption edge in infrared
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Item
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Specific Parameter
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Large SizeDiameter
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50 mm or customized
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Dimensional ToleranceDiameter tolerance
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±0.1 mm, customizable
Thickness tolerance:
±0.05 mm, customizable
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Surface Finish
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20/10 (Standard: MIL-PRF-13830B)
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Flatness
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≤ λ/8 @ 633 nm
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Parallelism
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30″
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Perpendicularity
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≤ 20′
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Chamfer
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≤ 0.3 mm × 45°
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Edge Chipping
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≤ 0.15 mm
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Coating
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Custom coating service available
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Shelf Life
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One year (under normal use)
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Industrial thickness measurement and nondestructive testing: As core material for sensors, suitable for thin‑film measurement and defect identification.